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DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.
FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz * Gate Length: Lg 0.20 m * Gate Width : Wg = 160 m
ORDERING INFORMATION (PLAN)
Part Number NE321000 Standard (Grade D) Quality Grade
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE321000)
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot
Note
Ratings 4.0 -3.0 IDSS 100 200 175 -65 to +175
Unit V V mA
A
mW C C
Tch Tstg
Note Chip mounted on an Alumina heatsink (size: 3 x 3 x 0.6 t)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14270EJ2V0DS00 (2nd edition) Date Published November 1999 N CP(K) Printed in Japan
The mark
shows major revised points.
(c)
1999
NE321000
RECOMMENDED OPERATING CONDITIONS (TA = +25 C)
Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 - TYP. 2 10 - MAX. 3 15 0 Unit V mA dBm
ELECTRICAL CHARACTERISTICS (TA = +25 C)
Parameter Gate to Source Leak Current Saturated Drain Current Gate to Source Cut Off Voltage Transconductance Noise Figure NF Associated Gain Symbol IGSO IDSS VGS(off) gm NF Ga Test Conditions VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, IDS = 100 A VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 10 mA f = 12 GHz MIN. - 15 -0.2 40 - 12.0 TYP. 0.5 40 -0.7 55 0.35 13.5 MAX. 10 70 -2.0 - 0.45 - Unit
A
mA V mS dB dB
Remark RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
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Data Sheet P14270EJ2V0DS00
NE321000
TYPICAL CHARACTERISTICS (TA = +25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250
Total Power Dissipation Ptot (mW)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100
200
Drain Current ID (mA)
80
150
60 VGS = 0 V -0.2 V 20 -0.4 V -0.6 V
100
40
50
0
50
100
150
200
250
0
1.0 Drain to Source Voltage VDS (V)
2.0
Ambient Temperature TA (C)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 VDS = 2 V
Maximum Stable Gain MSG. (dB) Maximum Available Gain MAG. (dB) 2 Forward Insertion Gain |S21s| (dB)
MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG.
60
Drain Current ID (mA)
40
16
20
12
|S21S|2
0 -2.0
-1.0 Gate to Source Voltage VGS (V)
0
8
4 1
2
4
6
8 10
14
20 30
Frequency f (GHz)
Data Sheet P14270EJ2V0DS00
3
NE321000
GAIN CALCULATIONS
MSG. = S21 S12 S21 S12 K= 1 + | |2 - |S11 |2 - |S22|2 2 |S12| |S21|
MAG. =
k k2 - 1
= S11*S22 - S21*S12
NOISE FIGURE, NF ASSOCIATED GAIN vs. DRAIN CURRENT 24 VDS = 2 V ID = 10 mA
NF Associated Gain Ga (dB)
NOISE FIGURE, NF ASSOCIATED GAIN vs. FREQUENCY
VDS = 2 V f = 12 GHz
15 Ga
NF Associated Gain Ga (dB)
Ga
Noise Figure NF (dB)
20
14
Noise Figure NF (dB)
13 2.0 1.5 1.0 0.5 NF 12 11
16
1.0
12
0.5 NF 0 1 2 4 6 8 10 14
8
0 4 20 30
10
20
30
Drain Current ID (mA)
Frequency f (GHz)
4
Data Sheet P14270EJ2V0DS00
NE321000
S-PARAMETERS
MAG. AND ANG. VDS = 2 V, ID = 10 mA
FREQUENCY GHz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 MAG. 0.998 0.987 0.981 0.970 0.962 0.952 0.941 0.927 0.912 0.898 0.882 0.868 0.855 0.843 0.827 0.807 0.796 0.793 0.788 0.782 0.783 0.785 0.778 0.766 0.757 0.753 0.755 0.748 0.743 ANG. -13.2 -19.3 -25.7 -32.7 -38.6 -44.4 -50.1 -55.6 -61.5 -66.9 -71.6 -75.9 -80.2 -84.2 -88.5 -92.6 -95.3 -98.0 -101.2 -103.8 -106.4 -109.9 -113.4 -116.0 -118.1 -119.9 -121.6 -124.2 -126.2 MAG. 4.72 4.70 4.62 4.50 4.45 4.37 4.28 4.17 4.03 3.90 3.79 3.66 3.54 3.42 3.30 3.16 3.05 2.97 2.89 2.79 2.70 2.62 2.53 2.46 2.40 2.33 2.29 2.23 2.16 S21 ANG. 170.2 165.6 160.5 155.7 151.6 147.4 143.5 139.7 135.6 131.5 128.0 124.9 121.9 119.0 115.8 112.9 110.8 108.7 106.2 104.1 101.9 99.5 97.4 95.8 93.8 92.5 90.6 88.4 86.8 MAG. 0.020 0.030 0.040 0.050 0.059 0.067 0.074 0.081 0.087 0.094 0.100 0.104 0.108 0.111 0.115 0.116 0.117 0.120 0.123 0.125 0.128 0.132 0.135 0.135 0.135 0.133 0.136 0.135 0.136 S12 ANG. 81.3 77.3 73.2 69.4 65.3 62.2 58.6 55.2 51.5 48.0 44.9 42.0 39.0 36.2 33.5 30.5 28.5 27.9 26.5 24.9 23.3 20.7 18.8 16.8 15.3 14.3 14.0 12.6 11.3 MAG. 0.602 0.599 0.593 0.588 0.583 0.574 0.567 0.564 0.552 0.541 0.536 0.526 0.518 0.509 0.501 0.494 0.488 0.489 0.487 0.484 0.486 0.477 0.474 0.481 0.469 0.463 0.484 0.481 0.475 S22 ANG. -10.0 -14.8 -19.9 -25.6 -30.1 -34.4 -39.1 -43.1 -47.2 -52.0 -55.5 -58.6 -62.1 -65.0 -68.3 -71.2 -73.2 -75.2 -77.4 -80.9 -82.7 -84.1 -87.9 -88.3 -89.2 -91.6 -93.5 -95.2 -97.5
Data Sheet P14270EJ2V0DS00
5
NE321000
NOISE PARAMETERS
VDS = 2 V, ID = 10 mA
opt Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 NFmin. (dB) 0.21 0.22 0.24 0.26 0.28 0.31 0.38 0.45 0.52 0.59 0.66 0.72 0.79 Ga (dB) MAG. 19.5 17.6 15.9 14.6 13.5 12.7 12.1 11.6 11.3 11.2 11.1 11.2 11.2 0.94 0.87 0.82 0.77 0.73 0.69 0.67 0.64 0.63 0.62 0.61 0.62 0.63 ANG. (deg.) 3.7 8.2 13.3 18.8 24.8 31.4 38.4 45.9 53.9 62.4 71.4 80.8 90.8 0.31 0.31 0.32 0.32 0.32 0.31 0.31 0.30 0.29 0.28 0.27 0.25 0.23 Rn/50
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Data Sheet P14270EJ2V0DS00
NE321000
CHIP DIMENSIONS (Unit: m)
38 56 27 58
38
Source
63
Drain
Source
224 36 69
Gate 61 300 26 56 38 Thickness = 140 m : BONDING AREA
38 38 300
Data Sheet P14270EJ2V0DS00
7
NE321000
CHIP HANDLING
DIE ATTACHMENT Die attach operation can be accomplished with Au-Sn (within a 300 C - 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be kept to minimum. As a general rule, the bonding operation should be kept within a 280 C, 2 minutes for all bonding wires. If longer periods are required, the temperature should be lowered. PRECAUTION The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate.
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Data Sheet P14270EJ2V0DS00
NE321000
[MEMO]
Data Sheet P14270EJ2V0DS00
9
NE321000
[MEMO]
10
Data Sheet P14270EJ2V0DS00
NE321000
[MEMO]
Data Sheet P14270EJ2V0DS00
11
NE321000
CAUTION
The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal.
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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